| PART |
Description |
Maker |
| TGF2021-04 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2021-02 |
DC - 12 GHz Discrete power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| TGF2022-06 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
| 8485A 8485D Q8486D W8486A R8486A Q8486A R8486D E44 |
8485A Power Sensor, 50 MHz to 26.5 GHz
8485D Diode Power Sensor, 50 MHz to 26.5 GHz
Q8486D Waveguide Power Sensor, 33 GHz to 50 GHz
W8486A Waveguide Power Sensor, 75 GHz to 110 GHz
R8486A Thermocouple Waveguide Power Sensor, 26.5 GHz to 40 GHz
Q8486A Thermocouple Waveguide Power Sensor, 33 GHz to 50 GHz
R8486D Waveguide Power Sensor, 26.5 GHz to 40 GHz
E4412A Wide Dynamic Range Power Sensor, E-Series
E4413A Wide Dynamic Range Power Sensor, E-Series
V8486A V-band Power Sensor, 50 GHz to 75 GHz
8482B High-Power Sensor, 100 kHz to 4.2 GHz, 25W
8487A Power Sensor, 50 MHz to 50 GHz
8482H Power Sensor, 100 kHz to 4.2 GHz, 3 W
8481D Diode Power Sensor, 10 MHz to 18 GHz
|
Agilent (Hewlett-Packard)
|
| TGF2021-08 |
DC - 12 GHz Discrete power pHEMT 直流- 12吉赫的分立功率pHEMT
|
Xiamen Hongfa Electroacoustic Co., Ltd.
|
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| TGF4230-SCC |
DC - 12 GHz Discrete HFET
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| 2SJ327 2SJ327-Z 2SJ327-Z-T1 2SJ327-Z-E2 2SJ327-Z-T |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0620-4 00; No. of Positions: 6; Connector Type: Panel
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
P-channel enhancement type
|
NEC Corp.
NEC[NEC]
|
| CMM3566-LC-000T PB-CMM3566-LC |
3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3.45.5 GHz 7.0伏，24 dBm的的W - CDMA功率放大
3.45 to 3.5 GHz 7.0 V, 24 dBm W-cdma Power Amplifier 3450 MHz - 3500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Mimix Broadband, Inc.
MIMIX BROADBAND INC
|
| BFY193 |
HIREL NPN SILICON RF TRANSISTOR (HIREL DISCRETE AND MICROWAVE SEMICONDUCTOR FOR LOW NOISE, HIGH GAIN BROADBAND AMPLIFIERS UP TO 2 GHZ.)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
